| PART |
Description |
Maker |
| M29W008AB M29W008AB100N1T M29W008AB100N5T M29W008A |
8 MBIT (1MB X8, BOOT BLOCK) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M27V160-120B1 M27V160-120B6 M27V160-120F1 M27V160- |
16 Mbit (2Mb x8 or 1Mb x16) Low Voltage UV EPROM and OTP EPROM
|
STMicroelectronics
|
| M27W801-200N6TR |
8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM
|
ST Microelectronics
|
| M29W008AT90N1T M29W008AB M29W008AB90N5T M29W008AT1 |
JFET-Input High Speed Dual Operational Amplifier 20-LCCC -55 to 125
Quad High-Speed JFET-Input Operational Amplifier 14-PDIP 8兆8，启动块低压单电源闪
JFET-Input High Speed Dual Operational Amplifier 8-CDIP -55 to 125 8兆8，启动块低压单电源闪
8 Mbit 1Mb x8 / Boot Block Low Voltage Single Supply Flash Memory
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
|
STMicroelectronics N.V.
ST Microelectronics
http://
|
| M36D0R6040T0ZAIT M36D0R6040B0ZAI M36D0R6040B0ZAIE |
64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M36W0R6040T0 M36W0R6040B0ZAQF M36W0R6040T0ZAQF M36 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
|
ST Microelectronics
STMicroelectronics
|
| M48T129V-70PM1 M48T129V-85PM1 M48T129Y-70PM1 M48T1 |
3.3V-5V 1Mb (128K x 8) Timekeeper SRAM(1Mb TIMERKEEPEER SRAM)
5.0 or 3.3V, 1 Mbit (128 Kbit x 8) TIMEKEEPER SRAM
|
意法半导
STMicroelectronics
|
| M27W101 M27W101-100B6TR M27W101-100F6TR M27W101-10 |
1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM 1兆位28KB x8低压紫外线EPROM和检察官办公室存储器
1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM 1兆位128KB x8低压紫外线EPROM和检察官办公室存储器
Hex Drivers 14-SOIC 0 to 70 1兆位28KB x8低压紫外线EPROM和检察官办公室存储器
64 Mbit 4Mb x16 3V Supply FlexibleROM Memory
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| HY29LV320BF-80 HY29LV320BF-80I HY29LV320BT-12I HY2 |
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 80 ns, PDSO48
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
122 x 32 pixel format, LED Backlight available 2M X 16 FLASH 3V PROM, 120 ns, PBGA63
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 90 ns, PBGA63
150 x 32 pixel format, LED Backlight available
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
|
http://
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| M29KW016E110M1T M29KW016E90N1T M29KW016E90ZA1T M29 |
16 Mbit (1Mb x16, Uniform Block) 3V Supply LightFlash Memory
|
意法半导
|
